| Processed Crystal Bar Diameter | 4~8inch |
| Processed Crystal Bar Length | ≤500mm |
| Ovality | ±0.01mm |
| Taper | ±0.015mm |
|
Surface roughness |
≤1μm |
| OF Width Head-Tail Deviation | ±0.1mm |
| Crystal Orientation Precision | ±10' |
| V-NOTCH Depth | 1.00~1.25mm |
| V-NOTCH Angle | 89°~93° |
| Minimum Table Feed | 0.005mm |
| Minimum Feed of Grinding Slide | 0.001mm |
|
Diameter accuracy |
±0.02mm |
| Table Reciprocating Speed | 4-800mm/min Continuously Adjustable |
| Equipment Dimensions | 3620x1800x2000mm |
| Total Power of Equipment | 20kW |
| Equipment Weight | 4.5t |
Can accommodate processing of 4-8 inch crystals
Processing Length0-500mm
Mitsubishi control system
Equipped with automatic lubrication system
Outer Circle Grinding
Measurement of Crystal Orientation Angle
Grinding of OF Surface
V-Notch Engraving
Surface Smoothness Ra0.8-1.00
Eccentricity 0.02/500mm
Taper ±0.05/500mm
Radial Precision ±10'
Silicon
LT/LN
Silicon Carbide
Gallium arsenide/indium phosphide
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