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Silicon, Gallium Arsenide, Indium Phosphide Processing EquipmentSilicon Carbide, Gallium Nitride, Sapphire Processing Equipment

CNC Grinding Machine

Main Technical Index
 
Processed Crystal Bar Diameter 4~8inch
Processed Crystal Bar Length ≤400mm
Ovality ≤0.05mm
Taper ≤±0.05mm
Surface Finish Ra0.8-1.0 (According to Grinding Wheel Grit)
OF Width Head-Tail Deviation ±0.1mm
Crystal Orientation Precision ±15'
V-NOTCH Depth 1.00~1.25mm
V-NOTCH Angle 89°~93°
Minimum Table Feed 0.005mm
Minimum Feed of Grinding Slide 0.005mm
Main Spindle Speed 0-200r/min Continuously Adjustable
Table Reciprocating Speed 4-800mm/min Continuously Adjustable
Equipment Dimensions 3600x1620x2150mm
Total Power of Equipment 20kW
Equipment Weight 4.5t
Equipment Advantages
Machine tool edge
  • Versatile Processing Specifications

    Can accommodate processing of 4-8 inch crystals

    Processing Length0-400mm

  • High Configuration

    Control system can be Mitsubishi or Omron

    Equipped with automatic lubrication system

  • Comprehensive Equipment Functions

    Outer Circle Grinding

    Measurement of Crystal Orientation Angle

    Grinding of OF Surface

    V-Notch Engraving

  • High Machining Precision

    Surface Smoothness Ra0.8-1.0

    Eccentricity 0.02/400mm

    Taper ±0.05/400mm

    Radial Precision ±15'

  • Silicon

  • LT/LN

  • Silicon Carbide

  • Gallium Arsenide