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Silicon, Gallium Arsenide, Indium Phosphide Processing EquipmentSilicon Carbide, Gallium Nitride, Sapphire Processing Equipment

Fully Automatic CNC Grinding Machine

Main Technical Index
 
Bar Diameter: 6-8 inch / 12 inch
Bar Length: 600mm/450mm
Ovality: ≤0.05mm
Taper: ≤0.05mm
Diameter Precision: ±0.05mm
Surface Roughness: Ra≤1 μm
Curve Surface Roughness: Ra≤1 μm
OF Width: ±0.1 mm
Crystal Orientation Precision: <±12'
V-NOTCH Depth: 1.00~1.25m
V-NOTCH Angle: m89°~93°(Customizable)
Top R Corner Shape: R0.9~0.94mm(Customizable)
Equipment Dimensions: 4900x2810x2350mm
Total Power of Equipment: 30 kW
Equipment Weight: 10.5t
Equipment Advantages
Machine tool edge
  • Versatile Processing

    Can meet the processing of 6-8" / 12" silicon wafers;

    Processing Length: 600/450mm

  • Comprehensive Features

    Includes silicon bar crystal orientation detection, grinding, OF surface processing, V-NOTCH slot processing - all achievable with full automation.

  • High Automation Level

    Single machine achieves full automation processing; automatic loading and unloading, automatic centering, automatic inspection, automatic processing, etc.

  • High Configuration

    Control system is either Mitsubishi or Omron;

    Equipped with an automatic lubrication system.

  • Stability

    Based on the mature grinding machine structure in the photovoltaic industry, optimized design for silicon wafer grinding in the semiconductor industry.

  • Well-Designed Mechanical Structure

    Integral welded base design;

    Fixtures and conveying mechanisms are located above the equipment, facilitating equipment protection and maintenance.